Chemical-mechanical polishing slurry and method

Details Chemical-mechanical polishing slurry and method Chemical-mechanical polishing slurry and method

2006-09-05

2006-09-05

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S691000, C438S693000, C252S079100

Reexamination Certificate

active

07101800

ABSTRACT:
The present invention provides a chemical-mechanical polishing slurry for use in removing a barrier layer during the fabrication of a damascene structure. The slurry according to the invention includes an agent that suppresses the rate at which an underlying silicon-containing dielectric layer is removed. In the presently most preferred embodiment of the invention, the agent that suppresses the rate at which an underlying silicon-containing dielectric layer is removed is L-lysine and/or L-arginine. The present invention also provides a method of suppressing the removal rate of an underlying silicon-containing dielectric layer during the chemical-mechanical polishing of a barrier layer in a damascene structure. The method according to the invention includes polishing the barrier layer with a slurry comprising an agent that suppresses the rate at which said underlying silicon-containing dielectric layer is removed.

REFERENCES:
patent: 4789648 (1988-12-01), Chow et al.
patent: 5738800 (1998-04-01), Hosali et al.
patent: 5759917 (1998-06-01), Grover et al.
patent: 6136711 (2000-10-01), Grumbine et al.
patent: 6194317 (2001-02-01), Kaisaki et al.
patent: 6238592 (2001-05-01), Hardy et al.
patent: 0786504 (1997-07-01), None
patent: 0846740 (1998-06-01), None
patent: 0853335 (1999-01-01), None
patent: WO 99/53532 (1999-10-01), None

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