Chemical mechanical polishing slurry and chemical mechanical...

Details Chemical mechanical polishing slurry and chemical mechanical... Chemical mechanical polishing slurry and chemical mechanical...

2007-06-07

2010-12-28

Culbert, Roberts (Department: 1716)

Etching a substrate: processes

Nongaseous phase etching of substrate

Using film of etchant between a stationary surface and a...

Reexamination Certificate

active

07857986

ABSTRACT:
A chemical mechanical polishing (CMP) slurry and a chemical mechanical polishing (CMP) apparatus and method reduce defects, such as scratches, while maintaining a high polishing rate of a target film to be polished through a CMP process. The CMP slurry includes a ceria-based abrasive having a concentration of 0.001-10 percent by weight and a silica-based abrasive having a concentration of 1-24 percent by weight.

REFERENCES:
patent: 2002/0004317 (2002-01-01), Cadien et al.
patent: 2004-200268 (2004-07-01), None
patent: 10-2003-0059070 (2003-07-01), None
patent: 1020050064592 (2005-06-01), None
patent: 1020050090209 (2005-09-01), None
patent: 10-2006-0019941 (2006-03-01), None
patent: 1020060038773 (2006-05-01), None

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