Chemical mechanical polishing slurry and chemical mechanical...

Details Chemical mechanical polishing slurry and chemical mechanical... Chemical mechanical polishing slurry and chemical mechanical...

2005-05-03

2005-05-03

Wilson, Lee D. (Department: 3723)

Abrading

Abrading process

Combined abrading

C451S041000, C451S288000, C252S079100, C252S079200, C252S079300, C051S302000, C051S307000, C051S308000, C051S309000, C438S690000, C438S692000, C156S922000

Reexamination Certificate

active

06887137

ABSTRACT:
Slurries for chemical mechanical polishing (CMP) are provided including a high planarity slurry and high selectivity ratio slurry. A high planarity slurry includes at least one kind of metal oxide abrasive particle and an anionic polymer passivation agent having a first concentration. A high selectivity ratio slurry includes at least one kind of the metal oxide abrasive particle, the passivation agent in a second concentration that is less than the first concentration of the passivation agent for the high planarity slurry, one of a quaternary amine and the salt thereof, and a pH control agent. The high selectivity ratio slurry has a pH in a range of about over an isoelectric point of a polishing target layer and less than an isoelectric point of a polishing stopper. In addition, a CMP method using the CMP slurries having high planarity and high selectivity ratio is provided.

REFERENCES:
patent: 5759917 (1998-06-01), Grover et al.
patent: 5958794 (1999-09-01), Bruxvoort et al.
patent: 6042741 (2000-03-01), Hosali et al.
patent: 6238592 (2001-05-01), Hardy et al.
patent: 6316365 (2001-11-01), Wang et al.
patent: 6540935 (2003-04-01), Lee et al.

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