Chemical mechanical polishing slurry

Details Chemical mechanical polishing slurry Chemical mechanical polishing slurry

1998-12-14

2000-04-04

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

216 89, 252 795, 438745, H01L 2100

Patent

active

060461128

ABSTRACT:
A CMP slurry comprising ZrO.sub.2 particles and a surfactant, comprising TMAH (Tetra-Methyl-Ammonium Hydroxide) or TBAH (Tetra-Butyl-Ammonium Hydroxide) in a water solution is suitable for polishing low dielectric constant k siloxane based SOG layers at a high polish removal rate and with high selectivity over deposited silicon oxide layers. Polish removal rates of up to 4000 Angstroms/min. are achieved at a selectivity ratio as high as 8.

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patent: 5525191 (1996-06-01), Maniar et al.
patent: 5614444 (1997-03-01), Farkas et al.
patent: 5704987 (1998-01-01), Huynh et al.
patent: 5733819 (1998-03-01), Kodama et al.
patent: 5962343 (1999-10-01), Kasai et al.

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