Chemical mechanical polishing process for forming shallow...

Details Chemical mechanical polishing process for forming shallow... Chemical mechanical polishing process for forming shallow...

2007-09-28

2009-06-09

Hendricks, Keith D (Department: 1794)

Etching a substrate: processes

Planarizing a nonplanar surface

C216S052000, C216S088000, C216S089000

Reexamination Certificate

active

07544305

ABSTRACT:
A shallow trench isolation (STI) multistage chemical mechanical polishing (CMP) method for forming a shallow trench isolation structure is provided. The substrate comprising a dense region and an isolation region, a silicon nitride layer formed over the substrate, a plurality of trenches formed in the silicon nitride layer and the substrate, an oxide layer formed over the substrate, filling the trenches, wherein a width of the trenches in the dense region is smaller than that in the isolation region. A first polishing step is performed to remove a portion of the silicon oxide layer until a thickness of the remaining portion of the oxide layer reaches a predetermined thickness. A second polishing step is performed to remove a portion of the remaining portion of the silicon oxide layer until the silicon nitride layer is exposed.

REFERENCES:
patent: 5759917 (1998-06-01), Grover et al.
patent: 6638866 (2003-10-01), Cheng et al.
patent: 2003/0153246 (2003-08-01), Desai et al.
patent: 2003/0176151 (2003-09-01), Tam et al.

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