Etching a substrate: processes – Nongaseous phase etching of substrate – Using film of etchant between a stationary surface and a...
Reexamination Certificate
2005-12-06
2005-12-06
Bueker, Richard (Department: 1763)
Etching a substrate: processes
Nongaseous phase etching of substrate
Using film of etchant between a stationary surface and a...
C438S693000, C451S036000, C051S309000, C423S627000
Reexamination Certificate
active
06972096
ABSTRACT:
A chemical-mechanical polishing process for planarizing at least one or more of thin films formed on a substrate, wherein the chemical-mechanical polishing is performed using a slurry containing abrasive particles mainly made of sialon or boehmite. This process is advantageous in improvement of a polishing rate without degradation in planarity of the processed surface and in level of metal impurities.
REFERENCES:
patent: 4956313 (1990-09-01), Cote
patent: 5366542 (1994-11-01), Yamada
patent: 5445807 (1995-08-01), Pearson
patent: 5478436 (1995-12-01), Winebarger
patent: 5527423 (1996-06-01), Neville
patent: 5693239 (1997-12-01), Wang et al.
patent: 5723019 (1998-03-01), Krussell et al.
CRC Handbook of Chemistry + Physics 54thEd CRC Press, 1974.
Wefers et al. “Oxides and Hydroxides of Aluminum” Alcoa Technical Paper No. 19, Revised, Alcoa Laboratories, 1987.
Bueker Richard
Kananen Ronald P.
Rader & Fishman & Grauer, PLLC
Sony Corporation
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