Chemical-mechanical polishing process

Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

451 36, H01L 2100, B24B 100

Patent

active

059069490

ABSTRACT:
A chemical-mechanical polishing process for planarizing at least one or more of thin films formed on a substrate, wherein the chemical-mechanical polishing is performed using a slurry containing abrasive particles mainly made of sialon or boehmite. This process is advantageous in improvement of a polishing rate without degradation in planarity of the processed surface and in level of metal impurities.

REFERENCES:
patent: 4117105 (1978-09-01), Hertzenberg et al.
patent: 4179408 (1979-12-01), Sanchez et al.
patent: 4344928 (1982-08-01), Dupin et al.
patent: 4731236 (1988-03-01), Murakawa et al.
patent: 4956015 (1990-09-01), Okajima et al.
patent: 5244534 (1993-09-01), Yu et al.
patent: 5370912 (1994-12-01), Bigelow et al.
patent: 5422223 (1995-06-01), Sachdev et al.
patent: 5429998 (1995-07-01), Someno et al.
patent: 5693239 (1997-12-01), Wang et al.
patent: 5779520 (1998-07-01), Hayakawa
patent: 5800577 (1998-09-01), Kido

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Chemical-mechanical polishing process does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Chemical-mechanical polishing process, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Chemical-mechanical polishing process will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-401177

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.