Chemical-mechanical polishing planarization monitor

Details Chemical-mechanical polishing planarization monitor Chemical-mechanical polishing planarization monitor

1996-08-09

1998-11-10

Nguyen, Nam

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

438693, 438788, 438 14, 216 38, 216 85, H01L 2100

Patent

active

058343750

ABSTRACT:
An improved and new process for chemical-mechanical polishing (CMP) of a substrate surface, wherein the endpoint for the planarization process is detected by monitoring the ratio of the rate of insulator material removal over a pattern feature to the rate of insulator material removal over an area without an underlying pattern feature, has been developed.

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patent: 5413941 (1995-05-01), Roos et al.
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patent: 5609718 (1997-03-01), Meikle
patent: 5637031 (1997-06-01), Chen
patent: 5667629 (1997-09-01), Pan et al.
patent: 5705435 (1998-01-01), Chen

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