Chemical mechanical polishing pad with controlled polish rate

Details Chemical mechanical polishing pad with controlled polish rate Chemical mechanical polishing pad with controlled polish rate

1998-03-10

2000-04-25

Sellers, Robert E.

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

451288, 451289, 451290, 451526, 451921, B24B 702, B24B 730, B24B 2904

Patent

active

060540176

ABSTRACT:
A chemical mechanical polish apparatus (FIG. 3B) for planarizing a semiconductor wafer (31) is disclosed. The apparatus includes a polishing pad (21) and a polishing head (32). The polishing pad includes a surface for polishing the semiconductor wafer. The surface has a hole (20). The polishing head is cooperatively engaged with the polishing pad. The polishing head holds the semiconductor wafer and applies it against the polishing pad. Both the polishing head and the polishing pad are rotatable.

REFERENCES:
patent: 5435772 (1995-07-01), Yu
patent: 5635083 (1997-06-01), Breivogel et al.
patent: 5672095 (1997-09-01), Morimoto et al.

Affiliated with

Also associated with

Rating

Chemical mechanical polishing pad with controlled polish rate does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Chemical mechanical polishing pad with controlled polish rate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Chemical mechanical polishing pad with controlled polish rate will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-990631