Chemical mechanical polishing pad and chemical mechanical...

Details Chemical mechanical polishing pad and chemical mechanical... Chemical mechanical polishing pad and chemical mechanical...

2007-02-27

2007-02-27

Chen, Kin-Chan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S008000, C451S056000

Reexamination Certificate

active

10892096

ABSTRACT:
A chemical mechanical polishing pad. The pad contains a water-insoluble matrix and Water-soluble particles dispersed in the water-insoluble matrix material and has a polishing surface and a non-polishing surface on a side opposite to the polishing surface. The pad has a light transmitting area which optically communicates from the polishing surface to the non-polishing surface. The non-polishing surface of the light transmitting area has a surface roughness (Ra) of 10 pm or less.

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U.S. Appl. No. 10/529,742, filed Mar. 29, 2005, Shiho et al.

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