Chemical mechanical polishing pad

Stock material or miscellaneous articles – Web or sheet containing structurally defined element or... – Composite having voids in a component

Reexamination Certificate

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C428S315500, C428S315700, C428S317900, C451S526000, C451S527000

Reexamination Certificate

active

07569268

ABSTRACT:
The polishing pad is suitable for planarizing at least one of semiconductor, optical and magnetic substrates. The polishing pad has an ultimate tensile strength of at least 3,000 psi (20.7 MPa) and polymeric matrix containing closed cell pores. The closed cell pores have an average diameter of 1 to 50 μm and represent 1 to 40 volume percent of the polishing pad. The pad texture has an exponential decay constant, τ, of 1 to 10 μm as a result of the natural porosity of the polymeric matrix and a surface texture developed by implementing periodic or continuous conditioning with an abrasive. The surface texture has a characteristic half height half width, W1/2that is less than or equal to the value of τ.

REFERENCES:
patent: 5578362 (1996-11-01), Reinhardt et al.
patent: 6860802 (2005-03-01), Vishwanathan et al.
patent: 6899612 (2005-05-01), Lawing
patent: 7074115 (2006-07-01), James et al.
patent: 7169030 (2007-01-01), Kulp
patent: 2003/0139122 (2003-07-01), Lawing
patent: 2005/0079806 (2005-04-01), James et al.
patent: 2005/0276967 (2005-12-01), Prasad
patent: 2006/0276109 (2006-12-01), Roy et al.
Chemical-Mechanical Planarization of Semiconductor Materials, edited by M. R. Oliver, Springer, New York, NY, 2004, pp. 204-206.

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