Chemical mechanical polishing pad

Stock material or miscellaneous articles – Composite – Of polyamidoester

Reexamination Certificate

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C451S526000, C451S527000

Reexamination Certificate

active

07445847

ABSTRACT:
The invention provides a polishing pad suitable for planarizing at least one of semiconductor, optical and magnetic substrates. The polishing pad includes a polymeric matrix having a top polishing surface. The top polishing surface has polymeric polishing asperities or forms polymeric polishing asperities upon conditioning with an abrasive. The polymeric polishing asperities are from a polymeric material having at least 45 weight percent hard segment and a bulk ultimate tensile strength of at least 6,500 psi (44.8 MPa). And the polymeric matrix has a two phase structure, a hard phase and a soft phase with an average area of the hard phase to average area of the soft phase ratio of less than 1.6.

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Szycher, Michael; Szycher's Handbook of Polyurethanes, 1999, pp. 11-1:11-23, CRC Press LLC, USA.

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