Chemical mechanical polishing of multiple material substrates an

Details Chemical mechanical polishing of multiple material substrates an Chemical mechanical polishing of multiple material substrates an

1998-03-10

2000-09-05

Utech, Benjamin L.

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

438691, 438693, H01L 21302

Patent

active

061142492

ABSTRACT:
A colloidal silica slurry containing triethanolamine is used in a chemical mechanical polishing process to polish multiple material substrates, such as silicon wafers containing silicon oxide where a thin underlayer of silicon nitride is used as a stop layer. The colloidal silica slurry containing triethanolamine is capable of achieving an oxide to nitride selectivity during polishing up to a demonstrated ratio of 28:1.

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