Chemical-mechanical polishing of hydrophobic materials by use of

Details Chemical-mechanical polishing of hydrophobic materials by use of Chemical-mechanical polishing of hydrophobic materials by use of

1998-01-27

1999-11-23

Utech, Benjamin

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

438693, H01L 2100

Patent

active

059900121

ABSTRACT:
The present invention comprises a method of chemical-mechanical polishing of a surface on a semiconductor substrate by providing a fixed-abrasive polishing pad; providing a surface to be polished; and providing a chemical polishing solution containing a surface tension-lowering agent that lowers the surface tension of the solution from the nominal surface tension of water to a surface tension that sufficiently wets a hydrophobic surface to be polished such that chemical-mechanical polishing is accomplished. The present invention also comprises pad improvements that mechanically sweep the polishing solution under the pad or that receive polishing solution from the back of the pad such that a tangential and radial shear is placed on the polishing solution as it flows away from the pad.

REFERENCES:
patent: 5020283 (1991-06-01), Tuttle
patent: 5297364 (1994-03-01), Tuttle
patent: 5547417 (1996-08-01), Breivogel et al.
patent: 5759917 (1998-06-01), Grover et al.
patent: 5827781 (1998-10-01), Skrovan et al.

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