Abrading – Abrading process – Glass or stone abrading
Reexamination Certificate
2005-05-31
2005-05-31
Nguyen, Dung Van (Department: 3723)
Abrading
Abrading process
Glass or stone abrading
C451S060000
Reexamination Certificate
active
06899596
ABSTRACT:
A chemical mechanical polishing (CMP) process using a chemically active slurry having a polarity selected to affect the relative oxidation rates of respective crystalline planes of a polycrystalline surface being polished. The slurry polarity is controlled to equilibrate the material removal rates from the respective crystalline planes during the CMP process. A polar solute may be added to a base solvent to achieve the desired polarity. A CMP process for a tungsten film may utilize a water-based slurry containing an abrasive agent, an oxidizing agent, and a solute having a polarity less than that of water. The abrasive agent may be colloidal silica, the oxidizing agent may be hydrogen peroxide, and the solute may be benzene.
REFERENCES:
patent: 5391258 (1995-02-01), Brancaleoni et al.
patent: 5770103 (1998-06-01), Wang et al.
patent: 5807165 (1998-09-01), Uzoh et al.
patent: 5873769 (1999-02-01), Chiou et al.
patent: 6312321 (2001-11-01), Fukushima et al.
patent: 6520840 (2003-02-01), Wang et al.
patent: 6569349 (2003-05-01), Wang et al.
patent: 6623355 (2003-09-01), McClain et al.
patent: 00309511.4 (2001-05-01), None
patent: PCT/US01/48100 (2002-05-01), None
Antonell Jennifer A.
Antonell Michael
Houge Erik Cho
Maynard Ryan Keith
Simpson Darrell L.
Agere Systems Inc.
Nguyen Dung Van
LandOfFree
Chemical mechanical polishing of dual orientation... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Chemical mechanical polishing of dual orientation..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Chemical mechanical polishing of dual orientation... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3386642