Chemical-mechanical polishing methods

Etching a substrate: processes – Nongaseous phase etching of substrate – Using film of etchant between a stationary surface and a...

Reexamination Certificate

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Reexamination Certificate

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07402259

ABSTRACT:
A chemical-mechanical polishing (CMP) method includes applying a solid abrasive material to a substrate, polishing the substrate, flocculating at least a portion of the abrasive material, and removing at least a majority portion of the flocculated portion from the substrate. Applying solid abrasive material can include applying a CMP slurry or a polishing pad comprising abrasive material. Such a method can further include applying a surfactant comprising material to the substrate to assist in effectuating flocculation of the abrasive material. Such surfactant comprising material may be cationic which includes, for example, a quaternary ammonium substituted salt. Also, for example, the surfactant comprising material may be applied during polishing, brush scrubbing, pressure spraying, or buffing.

REFERENCES:
patent: 4050954 (1977-09-01), Basi
patent: 5049200 (1991-09-01), Brunner et al.
patent: 5078801 (1992-01-01), Malik
patent: 5704987 (1998-01-01), Huynh et al.
patent: 5750440 (1998-05-01), Vanell et al.
patent: 5855811 (1999-01-01), Grieger et al.
patent: 5858813 (1999-01-01), Scherber et al.
patent: 5996594 (1999-12-01), Roy et al.
patent: 6039891 (2000-03-01), Kaufman et al.
patent: 6044851 (2000-04-01), Grieger et al.
patent: 6152148 (2000-11-01), George et al.
patent: 6258140 (2001-07-01), Shemo et al.
patent: 6265781 (2001-07-01), Andreas
patent: 6345630 (2002-02-01), Fishkin et al.
patent: 6835121 (2004-12-01), Andreas

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