Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Patent
1997-09-26
1999-11-09
Powell, William
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
216 88, 216 89, 438693, 156345, H01L 2100
Patent
active
059813946
ABSTRACT:
The present invention provides the chemical-mechanical polishing method having the step of subjecting a film to be polished, provided on a main surface of a substrate, and having a projection portion and a recess portion on a surface thereof, to polishing and etching, wherein the projection portion of the film to be polished is mechanically polished and chemically etched while covering the recess portion with a protective film to protect it from being chemically etched by supplying a protecting agent on the film to be polished.
REFERENCES:
patent: 5491113 (1996-02-01), Murota
patent: 5494857 (1996-02-01), Cooperman et al.
patent: 5688720 (1997-11-01), Hayashi
patent: 5880003 (1999-03-01), Hayashi
Kato Tuyoshi
Ohashi Hiroyuki
Kabushiki Kaisha Toshiba
Powell William
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