Chemical mechanical polishing method, polisher used in chemical

Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

216 88, 216 89, 438693, 156345, H01L 2100

Patent

active

059813946

ABSTRACT:
The present invention provides the chemical-mechanical polishing method having the step of subjecting a film to be polished, provided on a main surface of a substrate, and having a projection portion and a recess portion on a surface thereof, to polishing and etching, wherein the projection portion of the film to be polished is mechanically polished and chemically etched while covering the recess portion with a protective film to protect it from being chemically etched by supplying a protecting agent on the film to be polished.

REFERENCES:
patent: 5491113 (1996-02-01), Murota
patent: 5494857 (1996-02-01), Cooperman et al.
patent: 5688720 (1997-11-01), Hayashi
patent: 5880003 (1999-03-01), Hayashi

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Chemical mechanical polishing method, polisher used in chemical does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Chemical mechanical polishing method, polisher used in chemical , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Chemical mechanical polishing method, polisher used in chemical will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1455481

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.