Chemical-mechanical polishing method for forming plugs

Details Chemical-mechanical polishing method for forming plugs Chemical-mechanical polishing method for forming plugs

1997-10-28

2000-01-25

Utech, Benjamin

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

438738, 438742, H01L 2100

Patent

active

060178213

ABSTRACT:
A method for forming plugs using chemical-mechanical polishing, which includes providing a conductive layer having an inter-layer dielectric formed thereon; then, forming a contact hole in the inter-layer dielectric exposing portions of the conductive layer. Thereafter, a diffusion barrier layer and a glue layer are sequentially formed over the inter-layer dielectric and the exposed conductive layer. Next, a first metallic layer is deposited over the glue layer, and then etched back to form a residual first metallic layer. Subsequently, a second metallic layer is deposited over the glue layer and the residual first metallic layer. Finally, chemical-mechanical polishing is used to remove the second metallic layer above the inter-layer dielectric to form a metal plug. By depositing plug metal in stages, exposed cavities are no longer formed after a CMP operation is performed, thus avoiding the problem of CMP slurry getting inside a metal plug.

REFERENCES:
patent: 5618381 (1997-04-01), Doan et al.
patent: 5730835 (1998-03-01), Roberts et al.
patent: 5795828 (1998-08-01), Endo et al.
patent: 5814557 (1998-09-01), Venkatraman et al.
patent: 5861344 (1999-01-01), Roberts et al.

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