Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Patent
1996-06-26
1999-04-20
Codd, Bernard
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
216 89, 156345, 451 41, 451287, B24B 704, B24B 100
Patent
active
058952705
ABSTRACT:
An improved chemical mechanical polishing method of and apparatus (30) for performing CMP process on a plurality of semiconductor devices includes a plurality of carrier devices (14), each for receiving one of the plurality of semiconductor devices (22) such as a semiconductor wafer. A plurality of polishing pad mechanisms (12) associate with each of the carrier devices (14) so that each of the plurality of polishing pad mechanisms (12) separately and approximately simultaneously polishes one of the plurality of semiconductor devices (22). Control means controls the movement of each of the plurality of polishing pad mechanisms (12) relative to the associated semiconductor device (22) so that the semiconductor device (22) is separately polished. To minimize the adverse effects of gravity in the CMP process, the present invention may include a plurality of orienting mechanisms (38) for orienting each of the plurality of carrier devices (14) and each of the plurality of polishing pad mechanisms (12) in the vertical plane.
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Codd Bernard
Donaldson Richard L.
Hoel Carlton H.
Texas Instruments Incorporated
Valetti Mark A.
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