Chemical-mechanical polishing method

Details Chemical-mechanical polishing method Chemical-mechanical polishing method

2011-05-24

2011-05-24

Norton, Nadine G (Department: 1713)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S624000, C438S634000, C438S637000, C438S638000, C216S037000, C216S067000, C257S301000, C257S302000

Reexamination Certificate

active

07947603

ABSTRACT:
A chemical-mechanical polishing process for forming a conductive interconnect includes the steps of providing a semiconductor substrate having a first conductive line thereon, and then forming at least one dielectric layer over the substrate and the first conductive line. Next, a chemical-mechanical polishing method is used to polish the surface of the dielectric layer. Thereafter, a cap layer is formed over the polished dielectric layer. The method of forming the cap layer includes depositing silicon oxide using a chemical vapor deposition method with silicane (SiH.sub.4) or tetra-ethyl-ortho-silicate (TEOS) as the main reactive agent. Alternatively, the cap layer can be formed by depositing silicon nitride using a chemical vapor deposition method with silicane or silicon dichlorohydride (SiH.sub.2Cl.sub.2) as the main reactive agent. Finally, a via opening is formed through the dielectric layer and the cap layer, and a second conductive line that couples electrically with the first conductive line through the via opening.

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