Chemical mechanical polishing in forming semiconductor device

Details Chemical mechanical polishing in forming semiconductor device Chemical mechanical polishing in forming semiconductor device

2006-05-02

2006-05-02

Picardat, Kevin M. (Department: 2822)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Having substrate registration feature

C438S427000, C438S462000, C438S690000

Reexamination Certificate

active

07037802

ABSTRACT:
A method of chemical-mechanical polishing for forming a shallow trench isolation is disclosed. A substrate having a number of active regions, including a number of relatively large active regions and a number of relative small active regions, is provided. The method comprises the following steps. A silicon nitride layer on the substrate is formed. A number of shallow trenches are formed between the active regions one or more of which may constitute an alignment mark. An oxide layer is formed over the substrate, so that the shallow trenches are filled with the oxide layer. A partial reverse active mask is formed on the oxide layer. The partial reverse active mask exposes a portion of the oxide layer over the large active area and over the alignment mark. The oxide layer of each large active region and the alignment mark is removed. The partial reverse active mask is removed. The oxide layer is planarized.

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Liu, George Y., Zhang, Ray F., HSU, Kelvin, Camilletti, Lawrence, Chip-Level CMP Modeling and Smart Dummy for HDP and Conformal CVD Films, CMP Technology, Inc., and Rockwell Semiconductor, pp. 8, NO Date.

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