Chemical mechanical polishing for forming a shallow trench...

Details Chemical mechanical polishing for forming a shallow trench... Chemical mechanical polishing for forming a shallow trench...

2006-03-28

2006-03-28

Picardat, Kevin M. (Department: 2822)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S424000, C438S500000, C438S778000, C438S791000, C438S942000

Reexamination Certificate

active

07018906

ABSTRACT:
A method of chemical-mechanical polishing for forming a shallow trench isolation is disclosed. A substrate having a number of active regions, including a number of relatively large active regions and a number of relatively small active regions, is provided. The method comprises the following steps. A silicon nitride layer on the substrate is first formed. A number of shallow trenches are formed between the active regions. An oxide layer is formed over the substrate, so that the shallow trenches are filled with the oxide layer. A partial reverse active mask is formed on the oxide layer. The partial reverse active mask has an opening at a central part of each relatively large active region. The opening exposes a portion of the oxide layer. The opening has at least a dummy pattern. The oxide layer on the central part of each large active region is removed to expose the silicon nitride layer. The partial reverse active mask is removed. The oxide layer is planarized to expose the silicon nitride layer.

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Liu, George Y., Zhang, Ray F., Hsu, Kelvin, Camilletti, Lawrence, Chip-Level CMP Modeling and Smart Dummy for HDP and Conformal CVD Films, CMP Technology. Inc., and Rockwell Semiconductor, pp. 8, No Date.

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