Chemical mechanical polishing endpoint process control

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324 715, 451 41, H01L 2166, B24B 4916

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active

056594925

ABSTRACT:
A method and apparatus are provided for determining the endpoint for chemical mechanical polishing a film on a wafer. First, a reference point polishing time indicating when a breakthrough of the film has occurred is determined, then an overpolishing time indicating an interval between the reference point polishing time and when the film has been completely polished is determined. To get the total polishing time to the endpoint, the reference point polishing time and the overpolishing time are added.

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patent: 5245794 (1993-09-01), Salugsugan
patent: 5433651 (1995-07-01), Lustig et al.
patent: 5559428 (1996-09-01), Li et al.

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