Chemical mechanical polishing compositions for metal and...

Abrading – Abrading process – Utilizing fluent abradant

Reexamination Certificate

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C051S307000, C051S308000, C051S309000, C438S693000

Reexamination Certificate

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07029373

ABSTRACT:
A chemical mechanical polishing slurry composition and method for using the slurry composition for polishing copper, barrier material and dielectric material that comprises first and second-step slurries. The first-step slurry has a high removal rate on copper and a low removal rate on barrier material. The second-step slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first slurry comprises at least an organic polymeric abrasive.

REFERENCES:
patent: 6375545 (2002-04-01), Yano et al.
patent: 6443812 (2002-09-01), Costas et al.
patent: 6454819 (2002-09-01), Yano et al.
patent: 6527818 (2003-03-01), Hattori et al.
patent: 01/02134 (2001-01-01), None
Jianfeng Luo, et al. “Integrated Model for Chemical-Mechanical Polishing Based on A Comprehensive Material Removal Model”, Sixth International Conference on Chemical-Mechanical Polish (CMP) Planarization for ULSI Multilevel Interconnection (CMP-MIC), Santa Clara, CA USA Mar. 8-9, 2001.
Byron J. Palla, et al., “Stabilization of High Ionic Strength Slurries Using the Synergistic Effects of a Mixed Surfactant System”, Journal of Colloid and Interface Science 223, 102-111 (2000).

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