Chemical mechanical polishing composition and methods...

Details Chemical mechanical polishing composition and methods... Chemical mechanical polishing composition and methods...

2008-12-11

2011-12-06

Vinh, Lan (Department: 1713)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S691000, C438S693000, C216S089000

Reexamination Certificate

active

08071479

ABSTRACT:
A method for chemical mechanical polishing of a substrate comprising a barrier material in the presence of at least one of an interconnect metal and a low-k dielectric material using a chemical mechanical polishing composition comprising water; 1 to 40 wt % abrasive having an average particle size of ≦100 nm; 0.001 to 5 wt % quaternary compound; a material having a formula (I):wherein R is selected from C2-C20alkyl, C2-C20aryl, C2-C20aralkyl and C2-C20alkaryl; wherein x is an integer from 0 to 20; wherein y is an integer from 0 to 20; wherein x+y≧1; and, wherein the chemical mechanical polishing composition has a pH≦5.

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