Chemical mechanical polishing composition

Details Chemical mechanical polishing composition Chemical mechanical polishing composition

1997-08-14

1999-04-06

Jones, Deborah

Abrasive tool making process, material, or composition

With inorganic material

Clay, silica, or silicate

51309, 106 3, 252 791, B24D 334

Patent

active

058912053

ABSTRACT:
A chemical mechanical polishing composition for polishing an oxide layer of a semiconductor device, the composition comprising an alkaline aqueous dispersion containing generally uniformly-shaped nanocrystalline particles of cerium oxide derived from a physical vapor synthesis process, generally uniformly-shaped particles of silicon dioxide, and wherein the cerium oxide particles are substantially the same or smaller in size and size distribution to the silicon dioxide particles. The ratio of the weight of the silicon dioxide in the composition to the weight of the cerium oxide in the composition is in the range from about 7.5:1 to about 1:1.

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K. Pak, et al., A CMP Process Using a Fast Oxide Slurry, Feb. 13-14, 1997, CMP-MIC Conference, pp. 299-306.
Borba, M. et al., "Effect of Oxide CMP Slurry Properties on Polishing Performance", no date.

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