Chemical-mechanical polishing (CMP) apparatus

Details Chemical-mechanical polishing (CMP) apparatus Chemical-mechanical polishing (CMP) apparatus

1996-08-09

1998-01-06

Powell, William

Semiconductor device manufacturing: process

Including control responsive to sensed condition

Optical characteristic sensed

156345, 438692, 216 38, 216 85, 216 88, H01L 2100

Patent

active

057054355

ABSTRACT:
An improved and new apparatus and process for chemical-mechanical polishing (CMP) the surface of a semiconductor substrate to a planar condition has beed developed. The planarization endpoint, which is independent of topographic pattern density, is detected by monitoring the ratio of the rate of insulator material removal over a pattern feature to the rate of insulator material removal over an area without an underlying pattern feature.

REFERENCES:
patent: 5069002 (1991-12-01), Sandhu et al.
patent: 5234868 (1993-08-01), Cote
patent: 5413941 (1995-05-01), Koos et al.
patent: 5439551 (1995-08-01), Meikle et al.

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