Chemical-mechanical polishing (CMP) apparatus

Semiconductor device manufacturing: process – Including control responsive to sensed condition – Optical characteristic sensed

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156345, 438692, 216 38, 216 85, 216 88, H01L 2100

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active

057054355

ABSTRACT:
An improved and new apparatus and process for chemical-mechanical polishing (CMP) the surface of a semiconductor substrate to a planar condition has beed developed. The planarization endpoint, which is independent of topographic pattern density, is detected by monitoring the ratio of the rate of insulator material removal over a pattern feature to the rate of insulator material removal over an area without an underlying pattern feature.

REFERENCES:
patent: 5069002 (1991-12-01), Sandhu et al.
patent: 5234868 (1993-08-01), Cote
patent: 5413941 (1995-05-01), Koos et al.
patent: 5439551 (1995-08-01), Meikle et al.

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