Chemical mechanical polishing assembly with altered...

Details Chemical mechanical polishing assembly with altered... Chemical mechanical polishing assembly with altered...

2007-09-20

2009-06-09

Eley, Timothy V (Department: 3724)

Abrading

Machine

C451S288000, C451S290000, C451S550000, C451S551000

Reexamination Certificate

active

07544115

ABSTRACT:
A chemical-mechanical polishing apparatus is provided that creates a uniform kinematical pattern on the surface of a wafer being polished. The apparatus may have a polishing pad comprising a polishing pad surface having a center point that lies within an axis of motion for the polishing pad and a plurality of grooves entrenched in the polishing pad surface and defining a pattern of shapes. The pattern has an axis of symmetry that is offset from the polishing pad surface center point. The apparatus may be operated in a manner such that the kinematics of the CMP process are uniform across the surface of the wafer.

REFERENCES:
patent: 5431596 (1995-07-01), Akita et al.
patent: 5650039 (1997-07-01), Talieh
patent: 5842910 (1998-12-01), Krywanczyk et al.
patent: 5944583 (1999-08-01), Cruz et al.
patent: 6824455 (2004-11-01), Osterheld et al.
patent: 7252582 (2007-08-01), Renteln

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