Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2008-05-27
2008-05-27
Everhart, Caridad M. (Department: 2891)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S690000, C257S021000, C451S057000
Reexamination Certificate
active
11102639
ABSTRACT:
Disclosed is a chemical mechanical polishing aqueous dispersion comprising (A1) first fumed silica having a specific surface area of not less than 10 m2/g and less than 160 m2/g and an average secondary particle diameter of not less than 170 nm and not more than 250 nm and (A2) second fumed silica having a specific surface area of not less than 160 m2/g and an average secondary particle diameter of not less than 50 nm and less than 170 nm. Also disclosed is a chemical mechanical polishing method using the chemical mechanical polishing aqueous dispersion. According to the chemical mechanical polishing aqueous dispersion and the chemical mechanical polishing method, a chemical mechanical polishing process wherein a barrier metal layer and a cap layer can be efficiently removed by polishing and damage to an insulating film material of a low dielectric constant present in the underlying layer is reduced can be carried out.
REFERENCES:
patent: 2001/0018270 (2001-08-01), Tsuchiya et al.
patent: 2001/0051746 (2001-12-01), Hagihara et al.
patent: 2003/0061766 (2003-04-01), Vogt et al.
patent: 2004/0010979 (2004-01-01), Oshima et al.
patent: 2004/0115370 (2004-06-01), Funakoshi et al.
patent: 2006/0117667 (2006-06-01), Siddiqui et al.
patent: 1 006 166 (2000-06-01), None
patent: 3-50112 (1991-03-01), None
patent: 8-139092 (1996-05-01), None
patent: 10-310415 (1998-11-01), None
patent: 11-33378 (1999-02-01), None
patent: 11-57521 (1999-03-01), None
patent: 11-147036 (1999-06-01), None
patent: 2000-458 (2000-01-01), None
patent: 2002-270545 (2002-09-01), None
patent: 2003-77920 (2003-03-01), None
Hattori Masayuki
Kawahashi Nobuo
Konno Tomohisa
Kubota Kiyonobu
Shida Hirotaka
Everhart Caridad M.
JSR Corporation
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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