Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2008-05-27
2008-05-27
Everhart, Caridad M. (Department: 2891)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S690000, C257S021000, C451S057000
Reexamination Certificate
active
07378349
ABSTRACT:
Disclosed is a chemical mechanical polishing aqueous dispersion comprising (A1) first fumed silica having a specific surface area of not less than 10 m2/g and less than 160 m2/g and an average secondary particle diameter of not less than 170 nm and not more than 250 nm and (A2) second fumed silica having a specific surface area of not less than 160 m2/g and an average secondary particle diameter of not less than 50 nm and less than 170 nm. Also disclosed is a chemical mechanical polishing method using the chemical mechanical polishing aqueous dispersion. According to the chemical mechanical polishing aqueous dispersion and the chemical mechanical polishing method, a chemical mechanical polishing process wherein a barrier metal layer and a cap layer can be efficiently removed by polishing and damage to an insulating film material of a low dielectric constant present in the underlying layer is reduced can be carried out.
REFERENCES:
patent: 2001/0018270 (2001-08-01), Tsuchiya et al.
patent: 2001/0051746 (2001-12-01), Hagihara et al.
patent: 2003/0061766 (2003-04-01), Vogt et al.
patent: 2004/0010979 (2004-01-01), Oshima et al.
patent: 2004/0115370 (2004-06-01), Funakoshi et al.
patent: 2006/0117667 (2006-06-01), Siddiqui et al.
patent: 1 006 166 (2000-06-01), None
patent: 3-50112 (1991-03-01), None
patent: 8-139092 (1996-05-01), None
patent: 10-310415 (1998-11-01), None
patent: 11-33378 (1999-02-01), None
patent: 11-57521 (1999-03-01), None
patent: 11-147036 (1999-06-01), None
patent: 2000-458 (2000-01-01), None
patent: 2002-270545 (2002-09-01), None
patent: 2003-77920 (2003-03-01), None
Hattori Masayuki
Kawahashi Nobuo
Konno Tomohisa
Kubota Kiyonobu
Shida Hirotaka
Everhart Caridad M.
JSR Corporation
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
LandOfFree
Chemical mechanical polishing aqueous dispersion and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Chemical mechanical polishing aqueous dispersion and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Chemical mechanical polishing aqueous dispersion and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2772084