Chemical mechanical polishing apparatus and method

Details Chemical mechanical polishing apparatus and method Chemical mechanical polishing apparatus and method

1997-12-23

2000-01-18

Utech, Benjamin

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

156345, 216 86, 216 89, 438 17, 438 18, H01L 21302, C23F 102

Patent

active

060157542

ABSTRACT:
A CMP apparatus is used to subject a target surface of a semiconductor wafer to a polishing treatment, by moving the target surface and a polishing surface of a polishing cloth relative to each other while supplying a polishing liquid between the target surface and the polishing surface. Electric resistance is measured between pairs of measuring points arranged on opposite sides of dicing lines on the target surface, while subjecting the target surface to the polishing treatment. The polishing treatment is caused to be ended by comparing detected values of a changing rate in measured values of the electric property with a reference value set to correspond to an end point of the polishing treatment.

REFERENCES:
patent: 5081421 (1992-01-01), Miller et al.
patent: 5321304 (1994-06-01), Rostoker
patent: 5337015 (1994-08-01), Lustig
patent: 5562529 (1996-10-01), Kishii et al.

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