Chemical mechanical polishing apparatus and a polishing cloth fo

Details Chemical mechanical polishing apparatus and a polishing cloth fo Chemical mechanical polishing apparatus and a polishing cloth fo

1997-10-29

2000-05-09

Gulakowski, Randy

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

451443, B24B 2900

Patent

active

060599219

ABSTRACT:
The present invention provides a CMP apparatus for minimizing the deterioration of the polishing performance and allows easy detection of the its useful operational limit. The CMP apparatus for polishing of the semiconductor substrate is provided with a dresser for removing abrasive grains which have fallen onto the polishing cloth. A particle remover is provided for easily removing abrasive grains at approximately the same time or at a different time as the dressing process. The polishing cloth includes a use limit indicator formed in a concavity of the cloth. Upon the exposure of the use limit indicator, the limit of the polishing cloth can be easily detected.

REFERENCES:
patent: 5531635 (1996-07-01), Mogi et al.
patent: 5857898 (1999-01-01), Hiyama et al.

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