Chemical mechanical polish of PCMO thin films for RRAM...

Details Chemical mechanical polish of PCMO thin films for RRAM... Chemical mechanical polish of PCMO thin films for RRAM...

2007-04-17

2007-04-17

Luu, Chuong Anh (Department: 2818)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S199000, C438S240000

Reexamination Certificate

active

10971665

ABSTRACT:
A method of fabricating a CMR layer in a CMOS device using CMP to pattern the CMR layer includes preparing a silicon substrate, including fabrication of a bottom electrode in the silicon substrate; depositing a layer of SiNxon the substrate; patterning and etching the SiNxlayer to form a damascene trench over the bottom electrode; depositing a layer CMR material over the SiNxand in the damascene trench; removing the CMR material overlying the SiNxlayer by CMP, leaving the CMR material in the damascene trench; and completing the CMOS structure.

REFERENCES:
patent: 6204139 (2001-03-01), Liu et al.
patent: 6723643 (2004-04-01), Pan et al.
patent: 6759249 (2004-07-01), Zhuang et al.
patent: 7030498 (2006-04-01), Kakamu et al.
Liu et al.,Electric-pulse-induced reversible resistance change effect in magnetoresistive films, Applied Physics Letters, vol. 76, No. 19; May 8, 2000, pp. 2749-2751.

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