Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Patent
1997-11-03
1999-08-31
Utech, Benjamin
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
438692, 438693, H01L 21302
Patent
active
059453460
ABSTRACT:
A chemical mechanical planarization tool that reduces a volume of polishing chemistry used in a wafer polishing process includes a rinse bar (87) for removing polishing chemistry and particulates from a polishing media and a slurry measurement system (84) for regulating a pump (83) of a slurry delivery system. A volume of the slurry delivery system is reduced to less than 100 milliliters. Approximately a minimum volume of polishing chemistry for polishing a single wafer is dispensed during each wafer polishing process of a wafer lot. During each wafer polishing process the slurry delivery system is purged to prevent settling, agglomeration, and hardening of the polishing chemistry. The rinse bar (87) sprays a surface of the polishing media to remove spent polishing chemistry and particulates prior to polishing another semiconductor wafer.
REFERENCES:
patent: 5578529 (1996-11-01), Mullins
patent: 5709593 (1998-01-01), Guthrie et al.
patent: 5804507 (1998-09-01), Perlov et al.
Buley Todd W.
Vanell James F.
Chen Kin-Cham
Jackson Kevin B.
Motorola Inc.
Utech Benjamin
LandOfFree
Chemical mechanical planarization system and method therefor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Chemical mechanical planarization system and method therefor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Chemical mechanical planarization system and method therefor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2426413