Chemical beam deposition method utilizing alkyl compounds in a c

Details Chemical beam deposition method utilizing alkyl compounds in a c Chemical beam deposition method utilizing alkyl compounds in a c

1984-11-30

1987-01-13

Saba, William G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29576E, 148DIG110, 148DIG169, 156611, 156612, 156613, 156DIG70, 156DIG103, H01L 21203, H01L 21205

Patent

active

046362681

ABSTRACT:
Epitaxial layers of semiconductor materials such as, e.g., III-V and II-VI materials are deposited on a substrate under high-vacuum conditions. Molecules of a compound of a constituent of such material travel essentially line-of-sight towards the substrate admixed to a carrier gas such as, e.g., hydrogen. For III-V layers the use of compounds, such as, e.g., trimethyl- and triethylgallium, trimethyl- and triethylindium, triethylphosphine, and trimethylarsine is advantageous and economical in the manufacture of electronic and opto-electronic devices.

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patent: 4477311 (1984-10-01), Mimura et al.
Journal of Crystal Growth 55, 1981, "Metalorganic CVD of GaAs in a Molecular Beam System," E. Veuhoff, W. Pletschen, P. Balk, and H. Luth, pp. 30-34.
Journal of Applied Physics 51 (11), 1981, "A New Low Temperature III-V Multilayer Growth Technique: Vacuum Metalorganic Chemical Vapor Deposition", L. M. Fraas, pp. 6939-6943.
Morris et al., "New GaAs . . . Vacuum Deposition Technique . . . Phosphine Gas", J. Vac. Sci. Technol., vol. 11, No. 2, Mar./Apr. 1974, pp. 506-510.
Calawa, A. R., "On the Use of AsH.sub.3 in Molecular Beam Epitaxial Growth of GaAs" Appl. Phys. Lett., 38 (9), May 1, 1981, pp. 701-703.
Calawa, A. R., "Effect of H.sub.2 on Residual Impurities in GaAs MBE Layers" Appl. Phys. Lett., 33(12), Dec. 15, 1978, pp. 1020-1022.

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