Charging protection device

Details Charging protection device Charging protection device

2009-06-12

2011-11-01

Nhu, David (Department: 2895)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

On insulating substrate or layer

C438S009000, C438S199000, C438S141000, C438S753000, C257SE21042, C257SE21051, C257SE21320, C257SE21311, C257SE21352, C257SE21370, C257SE21550, C257SE21546

Reexamination Certificate

active

08048753

ABSTRACT:
Shallow trench isolation silicon-on-insulator (SOI) devices are formed with improved charge protection. Embodiments include an SOI film diode and a P+substrate junction as a charging protection device. Embodiments also include a conductive path from the SOI transistor drain, through a conductive contact, a metal line, a second conductive contact, an SOI diode, isolated from the transistor, a third conductive contact, a second conductive line, and a fourth conductive contact to a P+-doped substrate contact in the bulk silicon layer of the SOI substrate.

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International Search Report and Written Opinion for corresponding application PCT/US2010/037592, dated Aug. 13, 2010, pp. 1-13.

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