Charged particle litography method and apparatus

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250398, 2504923, 2504922, G06F 1546, H01J 37304

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active

053052250

ABSTRACT:
In an electron beam lithography method which irradiates a sample with an electron beam to draw a desired pattern on the sample, figure data representing the shape of an elemental figure, placement data representing placement information of the figure data, and dose data representing dose for each of areas which are obtained by dividing a drawing area which are smaller than the broadening of backscattering of an electron beam are independently stored in a memory as drawing data. On the basis of the drawing data, the figure data is divided into unit figures each of which has a predetermined shape and is smaller than a predetermined size. A represented point of each unit figure is calculated, a dose of an electron beam is obtained from the data set for an area in which the represented point is present, and the quantity of radiation is determined as dose for the unit figure.

REFERENCES:
patent: 4943729 (1990-07-01), Ando et al.
patent: 5008553 (1991-04-01), Abe
patent: 5051598 (1991-09-01), Ashton et al.
patent: 5135609 (1992-08-01), Pease et al.
patent: 5189306 (1993-02-01), Frei
Japanese Journal of Applied Physics; vol. 30, No. 3B; Mar., 1991: pp. L528-L531; Takayuki Abe, et al.; "Representative Figure Method for Proximity Effect Correction".
Journal of Applied Physics, vol. 50(6); Jun., 1979; pp. 4371-4387; Mihir Parikh; "Corrections to Proximity Effects in Electron Beam Lithography".
Journal of Applied Physics, vol. 65(11), Jun. 1, 1989; pp. 4428-4434; Takayuki Abe, et al. "Proximity Effect Correction For High-Voltage Electron Beam Lithography".
Journal of Vacuum Science Technology, vol. B4(1), Jan./Feb. 1986; pp. 159-163; J. M. Pavkovich; "Proximity Effect Correction Calculations by the Integral Equation Approximate Solution Method".

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