Charged particle exposure system having a capability of checking

Details Charged particle exposure system having a capability of checking Charged particle exposure system having a capability of checking

1993-11-26

1995-04-04

Berman, Jack I.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

25049222, 250397, H01J 37304

Patent

active

054040191

ABSTRACT:
A charged particle beam exposure system checks for the shape of the charged particle beam shaped by a mask by causing a scanning of a marker pattern provided on a substrate along a scanning path. The reflected electrons emitted from the substrate are detected, and the shape of the charged particle beam is obtained based upon the profile of the reflected electrons along the scanning path. By comparing expected pattern of the reflected charged particles, one can detect anomaly in the beam shaping aperture on the mask, wherein the step for comparing the observed pattern and the expected pattern includes a step of pattern matching for shifting the patterns with each other for seeking a minimum of unoverlapped area of the patterns. When the difference between the observed pattern and the expected pattern exceeds a threshold in the state that the unoverlapped area is minimized, an alarm produced with the information indicative of the location of the pattern wherein the threshold has been exceeded.

REFERENCES:
patent: 4647782 (1987-03-01), Wada et al.
patent: 5130550 (1992-07-01), Nakamua et al.
patent: 5180919 (1993-01-01), Oae et al.
Kawamura et al., "The Application of the Correlation Method for the EB (Electron Beam) Exposure System," Proc. of 1990 Intern. Microprocess Conference, JJAP Series 4, pp. 64-67.

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