Charged-particle exposure apparatus

Details Charged-particle exposure apparatus Charged-particle exposure apparatus

2007-10-30

2009-10-06

Vanore, David A (Department: 2881)

Radiant energy

With charged particle beam deflection or focussing

With target means

C250S492220, C250S492210, C250S492100, C250S492200, C250S492230, C250S307000, C250S3960ML, C250S453110, C250S281000, C250S298000, C369S043000, C369S101000, C369S053280

Reexamination Certificate

active

07598499

ABSTRACT:
In a particle-beam projection processing apparatus a target (41) is irradiated by means of a beam (pb) of energetic electrically charged particles, using a projection system (103) to image a pattern presented in a pattern definition means (102) onto the target (41) held at position by means of a target stage; no elements—other than the target itself—obstruct the path of the beam after the optical elements of the projection system. In order to reduce contaminations from the target space into the projection system, a protective diaphragm (15) is provided between the projection system and the target stage, having a central aperture surrounding the path of the patterned beam, wherein at least the portions of the diaphragm defining the central aperture are located within a field-free space after the projection system (103).

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Hudek, Peter et al., “Exposure optimization in high-resolution e-beam lithography”, Microelectronic Engineering 83 (2006) 780-783.

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