Charged-particle-beam transfer methods utilizing high and low re

Radiation imagery chemistry: process – composition – or product th – Including control feature responsive to a test or measurement

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430296, 430942, G03F 900

Patent

active

061176001

ABSTRACT:
Charged-particle-beam pattern-transfer methods, apparatus, and masks are disclosed that reduce the effects of resist-heating, avoid the so-called stencil problem, and exhibit high throughput. A circuit pattern is divided into low-resolution and high-resolution features that are defined by respective mask patterns in different areas of a mask or on different masks. The respective mask patterns are projected overlappingly onto the substrate. In another embodiment, a mask pattern defines low-resolution circuit features and a portion of high-resolution features. A second mask pattern defines a substantial portion of the high-resolution circuit features. The first and second mask patterns are projected onto the substrate with the charged-particle beam at first and second doses. The first dose, corresponding to the low-resolution circuit features, is larger than the second dose, and the first and second doses are independently selectable.

REFERENCES:
patent: 5260151 (1993-11-01), Berger et al.
patent: 5912096 (1999-06-01), Hada
patent: 5935744 (1999-08-01), Nakajima
Kratschmer et al., "Resist Heating Effects in 25 and 50 kV e-Beam Lithography on Glass Masks," J. Vac. Sci. Technol. B. 8:1898-1902 (Nov./Dec. 1990).
Nakajima et al., "Calculation of a Proximity Resist Heating in Variably Shaped Electron Beam Lithography," J. Vac. Sci. Technol. B. 8:2784-2788 (Nov./Dec. 1992).
Nakajima et al., "New Compensation Method for Avoiding Proximity Resist Heating in Variably Shaped Electron Beam Lithography," J. Vac. Sci. Technol. B. 8:1437-1440 (Nov./Dec. 1990).

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