Charged-particle-beam transfer methods exhibiting reduced resist

Details Charged-particle-beam transfer methods exhibiting reduced resist Charged-particle-beam transfer methods exhibiting reduced resist

1999-05-11

2000-08-29

Young, Christopher G.

Radiation imagery chemistry: process, composition, or product th

Including control feature responsive to a test or measurement

430296, G03F 900

Patent

active

061106275

ABSTRACT:
Charged-particle-beam (e.g., electron-beam) microlithography methods are disclosed that solve problems of poor accuracy of transferred pattern features caused by resist-heating effects and proximity effects. The methods can be used when the pattern is defined by a stencil reticle or a membrane ("scattering") reticle. With a stencil reticle defining features ordinarily exhibiting excessive resist heating (and consequent "thickening") when transferred, each culprit feature is divided into multiple separate feature groups. Each feature group is separately transferred to the substrate. The complete feature as transferred includes non-exposed regions, especially in interior regions of the feature. With a membrane reticle, culprit features include CPB-blocking regions that also form non-exposed regions inside the respective features as exposed. As a result, resist-heating effects are reduced without adversely affecting the edge profile of the features as transferred.

REFERENCES:
patent: 5935744 (1999-08-01), Nakajima
Liddle et al., "Proximity Effect Correction in Projection Electron Beam Lithography (Scattering with Angular Limitation Projection Electron-Beam Lithography)," Jpn. J. Appl. Phys. 34:6672-6678 (1995).

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