Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1996-10-30
1998-05-05
Berman, Jack I.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
250398, H01J 37317
Patent
active
057478198
ABSTRACT:
A charged particle beam transfer device exhibiting a low level of aberration is disclosed. The device comprises a first deflector for deflecting a charged particle beam, that has passed through a subfield on a reticle, such that the beam passes through the optical axis, or at least the center, of a projection lens. To such end, the first deflector deflects the beam a first angle of deflection relative to an optical axis of the device. The device also comprises a second deflector to deflect the beam, after having passed through the projection lens, at a second angle of deflection that is opposite the first angle of deflection. Thus, the beam is guided to a region on a substrate surface corresponding to the particular subfield on the reticle.
REFERENCES:
patent: 5466904 (1995-11-01), Pfeiffer et al.
patent: 5545902 (1996-08-01), Pfeiffer et al.
patent: 5635719 (1997-06-01), Petric
Nakasuji Mamoru
Simizu Hiroyasu
Berman Jack I.
Nikon Corporation
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