Charged-particle-beam-projection-microlithography transfer metho

Details Charged-particle-beam-projection-microlithography transfer metho Charged-particle-beam-projection-microlithography transfer metho

1999-09-13

2000-08-01

Young, Christopher G.

Radiation imagery chemistry: process, composition, or product th

Including control feature responsive to a test or measurement

430296, G03F 900

Patent

active

060964626

ABSTRACT:
A charged-particle-beam pattern-transfer apparatus is provided wherein a CPB is emitted from the CPB source, is focused by first and second condenser lenses, and is illuminated onto a mask. A deflector deflects the CPB to a selected subfield of the mask. The CPB transmitted by subfield is projected by a first projection lens toward a back-focal-plane aperture. The portion of the CPB that passes through the back-focal-plane aperture is projected by a second projection lens onto a wafer. Coulomb effect induced shifts in focal-point position, and changes in image magnification, projected-image rotation, and astigmatic blur and astigmatic distortions of the image are each corrected by application of electric current supplied to each component of a correction system, the correction system preferably comprising a set of correction lenses and two stigmators.

REFERENCES:
patent: 5260151 (1993-11-01), Berger et al.
patent: 5269151 (1993-12-01), Dinh

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