Charged-particle-beam projection-microlithography apparatus and

Details Charged-particle-beam projection-microlithography apparatus and Charged-particle-beam projection-microlithography apparatus and

1998-09-02

2000-07-11

Anderson, Bruce C.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

2504922, 25049222, H01J 37304

Patent

active

060876697

ABSTRACT:
A charged-particle-beam pattern-transfer apparatus is provided wherein a CPB is emitted from the CPB source, is focused by first and second condenser lenses, and is illuminated onto a mask. A deflector deflects the CPB to a selected subfield of the mask. The CPB transmitted by subfield is projected by a first projection lens toward a back-focal-plane aperture. The portion of the CPB that passes through the back-focal-plane aperture is projected by a second projection lens onto a wafer. Coulomb-effect-induced shifts in focal-point position, and changes in image magnification, projected-image rotation, and astigmatic blur and astigmatic distortions of the image are each corrected by application of electric current to respective components of a correction system, the correction system preferably comprising a set of correction lenses and two stigmators.

REFERENCES:
patent: 5260151 (1993-11-01), Berger et al.
patent: 5269151 (1993-12-01), Dinh
patent: 5834783 (1998-11-01), Muraki et al.
patent: 5856677 (1999-01-01), Okino

Affiliated with

Also associated with

Rating

Charged-particle-beam projection-microlithography apparatus and does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Charged-particle-beam projection-microlithography apparatus and , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Charged-particle-beam projection-microlithography apparatus and will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-544381