Charged-particle-beam projection methods

Details Charged-particle-beam projection methods Charged-particle-beam projection methods

1998-05-18

2000-06-06

Nguyen, Kiet T.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

2504911, H01J 37304

Patent

active

060721847

ABSTRACT:
Methods are disclosed for improving the accuracy of pattern registration between various layers formed on a sensitive substrate by microlithography using a charged-particle beam, especially registration accuracy as affected by rotation of image portions relative to corresponding image portions in an earlier applied layer. Errors in rotational angle of a pattern transferred to the n.sup.th layer and the arrangement direction of the transferred pattern on the substrate are measured. During projection of the (n+m).sup.th (e.g., the (n+1).sup.th) layer, the rotational angle of images that have passed through the mask subfields is corrected according to the measured rotational angle. Also, the deflection direction of the images on the substrate that have passed through the mask subfields is corrected according to the measured arrangement direction. The transfer subfields in the (n+m).sup.th layer can be accurately stitched together and corresponding transferred pattern in the n.sup.th and (n+m).sup.th layer can be accurately registered with respect to each other.

REFERENCES:
patent: 5621216 (1997-04-01), Clarke et al.
patent: 5912467 (1999-06-01), Okino

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