Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1997-11-07
2000-07-11
Anderson, Bruce C.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
250398, H01J 37302, H01J 37304
Patent
active
060876689
ABSTRACT:
Apparatus and methods are disclosed for projecting a mask pattern, divided into multiple mask subfields, onto a substrate at high resolution using a charged-particle beam (CPB). At least some of the mask subfields comprise "minimum-linewidth regions". To expose each mask subfield, a CPB (e.g., electron beam) is directed onto the mask subfield. The image of the mask subfield is projected by lens systems onto a respective transfer subfield on the substrate. Deflectors deflect the CPB to the selected mask subfield and to the corresponding transfer subfield on the substrate. A memory stores data concerning the locations of minimum-linewidth regions in the selected mask subfields and the corresponding amount of deflection of the beam for each corresponding mask subfield. An arithmetical processor calculates required focal lengths of the projection lens systems, based on the locations of the minimum-linewidth regions and on the amount of beam deflection required for each respective mask subfield, required to minimize the degree of blur of the minimum linewidth features of the respective mask subfield in the respective transfer subfield. A controller controls the amount of power delivered to the projection lens systems so that their focal lengths agree with the calculation results. The calculations can be performed in advance of exposure by a separate calculator and the resulting data stored in a memory for later recall and use by the controller.
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Anderson Bruce C.
Nikon Corporation
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