Charged-particle-beam projection-exposure method exhibiting aber

Radiation imagery chemistry: process – composition – or product th – Including control feature responsive to a test or measurement

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430296, G03F 900

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active

060278412

ABSTRACT:
Charged-particle-beam transfer-exposure apparatus are disclosed exhibiting reduced hybrid distortion. A charged particle beam passes through a mask and through a projection-lens assembly to form an image of a selected mask region on a wafer. Signals corresponding to the functions d.sub.x1 (X.sub.w, Y.sub.w, Z, I, s), d.sub.y1 (X.sub.w, Y.sub.w, Z, I, s), d.sub.x2 (X.sub.w, Y.sub.w, Z, I, s), d.sub.y2 (X.sub.w, Y.sub.w, Z, I, s), . . . , are generated by a computer and routed to respective deflectors to minimize deflection aberrations, wherein X.sub.w, Y.sub.w are the coordinates of the deflected transfer region on the wafer, Z is the wafer height, I is the beam current passing through the pattern area in a mask region, and s is a variable pertaining to scattering of charged particles in the pattern. The signals routed to the various deflectors also take into account the function g(X.sub.w, Y.sub.w, Z, I, s) which corrects deflection distortion.

REFERENCES:
patent: 5635719 (1997-06-01), Petric
Koikari et al., "Numerical Calculation on Optical System for EB Projection," Microprocess '96, The 9.sup.th Int'l Microprocess Conf., Jul. 8-11, 1996.
Saitou et al., "A High-Speed, High-Precision Electron Beam Lithography System (Electron Optics)," J. Vac. Sci. Technol. 3:98-101 (1985).
Zhu et al., "Dynamic Corrections of Aberrations in Focusing and Deflection Systems with Shaped Beams," SPIE 2522:66-77 (1995).

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