Charged-particle-beam projection-exposure apparatus with focus a

Details Charged-particle-beam projection-exposure apparatus with focus a Charged-particle-beam projection-exposure apparatus with focus a

1997-03-24

1999-04-13

Berman, Jack I.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

25049223, 2504911, 25044211, H01L 2130, H01J 37304

Patent

active

058941320

ABSTRACT:
Charged-particle-beam projection-exposure apparatus are disclosed for transferring patterns from a mask to a sensitized substrate. By measuring the height and tilt of regions of the sensitized substrate relative to the location of the projected image of the mask before the regions are exposed to the charged particle beam, the charged-particle-beam optical system and the wafer tilt and position can be corrected, maintaining a high-quality image of the mask on the sensitized substrate. Measuring the height and tilt of a region of the sensitized substrate before exposure of that region begins has several advantages. The measurements permit adjustments so that high-resolution images of the mask are transferred to the sensitized substrate even if wafer height and tilt vary rapidly. In addition, because the measurements of tilt and height occur away from the exposure region, height and tilt measuring devices do not restrict the placement or size of charged-particle-beam optical elements.

REFERENCES:
patent: 4849901 (1989-07-01), Shimizu
patent: 4891526 (1990-01-01), Reeds

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