Charged-particle-beam pattern-transfer apparatus and methods

Details Charged-particle-beam pattern-transfer apparatus and methods Charged-particle-beam pattern-transfer apparatus and methods

1998-03-25

1999-10-26

Berman, Jack I.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

25049222, 250398, H01J 37317, H01J 37153

Patent

active

059733330

ABSTRACT:
Charged-particle-beam projection-microlithography apparatus and methods are disclosed for transferring a reticle pattern image to a substrate using a charged-particle beam. The apparatus comprises, along an optical axis in the trajectory direction of the charged-particle beam, a beam emitter for emitting the charged-particle beam toward the mask, a beam shaper for shaping the charged-particle beam so as to have a square or rectangular transverse profile and deflectors for directing the charged-particle beam onto the mask. If the beam shaper creates a charged-particle beam having a rectangular transverse profile, the deflectors of the pattern-transfer apparatus of the present invention operate so that the longer sides of the transverse profile of the charged-particle beam extend in a direction perpendicular to the scanning direction. An axisymmetric projection-lens system converges, inverts and reduces the charged-particle beam which has passed through the mask, to form an image of the mask pattern on a substrate.

REFERENCES:
patent: 5773837 (1998-06-01), Nakasuji
patent: 5773838 (1998-06-01), Nakasuji
Idesawa et al., "Discontinuity reduction method in pattern connection", J. Vac. Sci. Tech. 19(4), 983-987, Nov./Dec. 1981.

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