Charged particle beam pattern generation apparatus and method

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

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2504911, 250396R, H01J 37302

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active

051499762

ABSTRACT:
A pattern control system and method for a charged particle beam such as a focused ion beam (FIB) (20) or electron beam writes beam patterns on a pixel-by-pixel (56) basis. Respective dwell times and beam blanking states are specified for each separate pixel location (56), enabling the creation of arbitrary patterns and various implantation gradients. Pixel commands are generated by a central processing unit (CPU) (104), which can be relieved by hardware pattern generators (FIG. 10) for frequently used patterns. The system also includes improvements in stigmation control, fiducial mark recognition and the reconciliation of the beam and target coordinate systems.

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